elektronische bauelemente sms3400a 5.8a , 30v , r ds(on) 32 m ? n-channel enhancement mode power mosfet 06-jan-2014 rev.a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the sms3400a provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sot-23 pa ckage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current (t 10s) i d 5.8 a pulsed drain current 1 i dm 30 a maximum power dissipation (t 10s) p d 400 mw thermal resistance junction-ambient 2 r ja 313 c / w operating junction & storage temperature t j , t stg 150, -55~150 c sot-23 r0 a top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50 top view
elektronische bauelemente sms3400a 5.8a , 30v , r ds(on) 32 m ? n-channel enhancement mode power mosfet 06-jan-2014 rev.a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a gate-threshold voltage 3 v gs(th) 0.7 - 1.4 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 12v, v ds =0 drain-source leakage current i dss - - 1 a v ds =24v, v gs =0 forward transconductance 3 g fs 8 - - s v ds =5v, i d =5a diode forward voltage 3 v sd - - 1 v i s =1a, v gs =0 - - 32 v ds =10v, i d =5.8a - - 38 v gs =4.5v, i d =5a static drain-source on-resistance 3 r ds(on) - - 45 m v gs =2.5v, i d =4a switching parameters 4 total gate charge q g - 9.5 - gate-source charge q gs - 1.5 - gate-drain change q gd - 3 - nc i d =5.8a v ds =15v v gs =4.5v input capacitance c iss - 1155 - output capacitance c oss - 108 - reverse transfer capacitance c rss - 84 - pf v gs =0 v ds =15v f =1.0mhz turn-on delay time t d(on) - 5 - rise time t r - 7 - turn-off delay time t d(off) - 40 - fall time t f - 6 - ns v ds =15v v gs =10v r gen =3 r l =2.7 gate resistance r g - - 3.6 v gs = v ds =0, f =1.0mhz note: 1. repetitive rating : pulse width limited by maxi mum junction temperature. 2. surface mounted on fr4 board, t < 5 sec. 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
elektronische bauelemente sms3400a 5.8a , 30v , r ds(on) 32 m ? n-channel enhancement mode power mosfet 06-jan-2014 rev.a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
